Editorial board

Honorary Editors-in-Chief

Bingkun ZHOU, Tsinghua University, China

Editors-in-Chief

Qihuang GONG, Peking University, China

Xinliang ZHANG, Xidian University, China; Huazhong University of Science and Technology, China

Peixiang LU, Huazhong University of Science and Technology, China

Associate Editors-in-Chief

Yidong HUANG, Tsinghua University, China

Perry SHUM, Southern University of Science and Technology, China

Jiang TANG, Huazhong University of Science and Technology, China

Executive Editors-in-Chief

Jianji DONG, Huazhong University of Science and Technology, China

Jian WANG, Huazhong University of Science and Technology, China

Members of Editorial Board

Shahzada AHMAD, Basque Center for Materials, Applications & Nanostructures, Spain

Dayan BAN, University of Waterloo, Canada

Walter BLONDEL, Université de Lorraine, France

Eric CASSAN, Paris-Sud University, France

Pai-Yen CHEN, University of Illinois at Chicago, USA

Yunhong DING, Technical University of Denmark, Denmark

Armin FISCHER, QD Solar, Canada

Weibo GAO, Nanyang Technological University, Singapore

Jr-Hau HE, City University of Hong Kong, China

Ghim Wei HO, National University of Singapore, Singapore

Weisheng HU, Shanghai Jiao Tong University, China

Xiaoyong HU, Peking University, China

Baohua JIA, Swinburne University of Technology, Australia

Toshio KAMIYA, Tokyo Institute of Technology, Japan

Junghwan KIM, Tokyo Institute of Technology, Japan

Howard (Ho Wai) LEE, University of California, Irvine, USA

Tao LI, Nanjing University, China

Yat LI, University of California, Santa Cruz, USA

Zhiyuan LI, South China University of Technology, China

Hongen LIAO, Tsinghua University, China

Aiqun LIU, Nanyang Technological University, Singapore

Yongfeng LU, University of Nebraska-Lincoln, USA

Masoud MAHJOURI-SAMANI, Auburn University, USA

Xiangshui MIAO, Huazhong University of Science and Technology, China

Cun-Zheng NING, Tsinghua University, China; Arizona State University, USA

Anlian PAN, Hunan University, China

Gang-Ding PENG, The University of New South Wales, Australia

Christophe PEUCHERET, Université de Rennes 1, France

Cheng-Wei QIU, National University of Singapore, Singapore

Junle QU, Shenzhen University, China

Junsuk RHO, Pohang University of Science and Technology, Republic of Korea

Filippo ROMANATO, University of Padova, Italy

Michael SALIBA, Technical University of Darmstadt, Germany

Sascha SCHÄFER, The Carl von Ossietzky University of Oldenburg, Germany

Kebin SHI, Peking University, China

Misha SUMETSKY, Aston University, UK

Hongbo SUN, Tsinghua University, China

Zhipei SUN, Aalto University, Finland

Limin TONG, Zhejiang University, China

Din Ping TSAI, City University of Hong Kong, China

Valery TUCHIN, Saratov State University, Russia

Qing WAN, Nanjing University, China

Alan X. WANG, Oregon State University, USA

Mingkui WANG, Huazhong University of Science and Technology, China

Xi WANG, University of Delaware, USA

Xihua WANG, University of Alberta, Canada

Xueding WANG, University of Michigan, USA

Dong WU, University of Science and Technology of China, China

Yunfeng XIAO, Peking University, China

Zewen XIAO, Huazhong University of Science and Technology, China

Wei XIONG, Huazhong University of Science and Technology, China

Xiulai XU, Peking University, China

Lianshan YAN, Southwest Jiaotong University, China

Sihua YANG, South China Normal University, China

Xusan YANG, Northwestern University, USA

Jianping YAO, University of Ottawa, Canada

Changyuan YU, The Hong Kong Polytechnic University, China

Siyuan YU, Sun Yat-sen University, China; University of Bristol, UK

Cheng ZHANG, Huazhong University of Science and Technology, China

Wei ZHANG, Fudan University, China

Weili ZHANG, Oklahoma State University, USA

Wanhua ZHENG, Institute of Semiconductors, Chinese Academy of Sciences, China

Weidong ZHOU, University of Texas at Arlington, USA

Dan ZHU, Huazhong University of Science and Technology, China

Rui ZHU, Peking University, China